| PART |
Description |
Maker |
| GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| BUP305 BUP305D Q67040-A4225-A2 BUP305-D |
IGBT Duopack (IGBT with Antiparallel ...
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH10N60AU1 IXGH10N60U1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs
|
IXYS Corporation
|
| IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4032PT PBSS4032PT-215 |
30 V, 2.4 A PNP low VCEsat (BISS) transistor
30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 ?18 December 2009
|
NXP Semiconductors
|
| BUP314D Q67040-A4226-A2 |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor Group
SIEMENS AG
|
| 2PD2150 |
20 V, 3 A NPN low VCEsat transistor
20 V, 3 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
Philips Semiconductors
|
